PMEG4010EP NXP Semiconductors, PMEG4010EP Datasheet - Page 6

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD128 small and flat leadSurface-Mounted Device (SMD) plastic package

PMEG4010EP

Manufacturer Part Number
PMEG4010EP
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD128 small and flat leadSurface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PMEG4010EP_2
Product data sheet
Fig 4.
Fig 6.
(A)
I
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
−1
−2
−3
−4
1
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
(1)
(2)
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
0.2
(3)
amb
(4)
= 25 °C
(5)
0.4
0.6
(pF)
C
250
200
150
100
d
50
0
0
0.8
All information provided in this document is subject to legal disclaimers.
006aab377
V
F
(V)
1
Rev. 02 — 15 April 2010
10
20
Fig 5.
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
−2
−3
−4
−5
−6
−7
−8
−9
30
0
Reverse current as a function of reverse
voltage; typical values
1 A low V
j
j
j
j
006aab379
V
= 125 °C
= 85 °C
= 25 °C
= −40 °C
R
(V)
40
10
F
MEGA Schottky barrier rectifier
(1)
(2)
(3)
(4)
PMEG4010EP
20
30
© NXP B.V. 2010. All rights reserved.
006aab378
V
R
(V)
40
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