BUK7511-55A NXP Semiconductors, BUK7511-55A Datasheet

Page 1

... BUK7511-55A N-channel TrenchMOS standard level FET Rev. 02 — 17 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET Min Typ - - - - - Figure ...

Page 4

... T 10 Conditions see Figure 4 vertical still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET 03nd26 = 10 μ 100 μ 100 (V) DS Min ...

Page 5

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A Min Typ Max Unit 4 ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET 14 DSon Drain-source on-state voltage as a function of gate-source voltage; typical values ...

Page 7

... GS Fig 10. Gate-source voltage as a function of turn-on 03aa32 R 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET ( ...

Page 8

... S (A) 120 100 = 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nd18 = 25 °C ...

Page 9

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7511-55A separated from data sheet BUK7511_7611_55A v.1. BUK7511_7611_55A v.1 20010201 (9397 750 07817) BUK7511-55A ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 June 2010 BUK7511-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 June 2010 Document identifier: BUK7511-55A ...