BUK7511-55A NXP Semiconductors, BUK7511-55A Datasheet - Page 4

• Manufacturer Part Number: BUK7511-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7511-55A
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
−1
−2
−3
1
1
3
2
10
1
−6
δ = 0.5
0.2
0.1
0.05
0.02
P
Single Shot
t
p
T
R
10
DSon
−5
δ =
= V
Conditions
see
vertical still air
T
t
All information provided in this document is subject to legal disclaimers.
t
p
DS
Figure 4
/ I
D
10
−4
Rev. 02 — 17 June 2010
D.C.
10
10
−3
10
N-channel TrenchMOS standard level FET
−2
V
DS
(V)
P
10
t
p
−1
T
t
t
100 μs
1 ms
10 ms
100 ms
p
p
BUK7511-55A
Min
-
-
δ =
= 10 μs
(s)
03nd26
03nd27
T
t
p
t
10
1
2
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.9
-
Unit
K/W
K/W
4 of 13