BUK7620-100A NXP Semiconductors, BUK7620-100A Datasheet - Page 6

• Manufacturer Part Number: BUK7620-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7620-100A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
2
4
min
V
GS
(V) = 10
typ
6
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
DS
(V)
03nd53
03aa35
20
(V)
10
Rev. 2 — 2 February 2011
6
9
8
7.5
6.5
5.5
4.5
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
22
20
18
16
14
12
60
40
20
0
gate-source voltage; typical values
drain current; typical values
Drain-source on-state voltage as a function of
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK7620-100A
40
15
60
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
(A)
03nd52
03nd50
20
80
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