BUK7620-100A NXP Semiconductors, BUK7620-100A Datasheet - Page 7

• Manufacturer Part Number: BUK7620-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7620-100A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
100
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
T
j
= 175 °C
60
4
max
min
typ
T
j
= 25 °C
120
6
All information provided in this document is subject to legal disclaimers.
V
T
GS
j
(°C)
03nd51
03aa32
(V)
180
Rev. 2 — 2 February 2011
8
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
DSon
(V)
GS
10
50
40
30
20
10
8
6
4
2
0
0
gate charge; typical values
of drain current; typical values
0
0
V
N-channel TrenchMOS standard level FET
GS
(V) = 5.5
20
50
V
DD
6
100
40
= 14 V
BUK7620-100A
6.5
150
60
7
V
DD
200
© NXP B.V. 2011. All rights reserved.
8 10
80
= 80 V
Q
I
G
D
03nd49
03nd54
(nC)
(A)
100
250
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