BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet - Page 7

• Manufacturer Part Number: BUK7E07-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E07-55B_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
(S)
g
fs
5
4
3
2
1
0
I
junction temperature
T
drain current; typical values
60
40
20
D
60
j
0
= 1 mA; V
= 25 C; V
0
0
DS
DS
25
= V
= 25 V
GS
60
50
max
min
typ
120
75
003aab852
T
j
( C)
003aac126
I
D
(A)
Rev. 01 — 29 January 2008
160
100
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
I
10
10
10
10
10
10
D
(nF)
C
1
2
3
4
5
6
T
gate-source voltage
V
as a function of drain-source voltage; typical
values
0
j
GS
4
3
2
1
0
10
= 25 C; V
N-channel TrenchMOS standard level FET
= 0 V; f = 1 MHz
2
DS
10
= V
2
1
GS
min
BUK7E07-55B
1
typ
C
C
C
4
oss
iss
rss
max
V
© NXP B.V. 2008. All rights reserved.
10
GS
003aab853
(V)
V
003aac127
DS
(V)
6
10
2
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