BUK9529-100B NXP Semiconductors, BUK9529-100B Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9529-100B

Manufacturer Part Number
BUK9529-100B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK9529-100B
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BUK9529-100B
Manufacturer:
NXP
Quantity:
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK9529-100B
N-channel TrenchMOS logic level FET
Rev. 02 — 9 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 5 V; T
= 10 V; I
= 5 V; I
1; see
D
mb
j
D
≤ 175 °C
= 25 A;
= 25 A;
= 25 °C;
Figure
Figure 2
Figure 3
11;
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
22
24
Max Unit
100
46
157
27
29
V
A
W
mΩ
mΩ

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BUK9529-100B Summary of contents

Page 1

... BUK9529-100B N-channel TrenchMOS logic level FET Rev. 02 — 9 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 13 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET Min ≤ 100 V; - sup = ° ...

Page 3

... P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET Min - - -15 Figure 1; - Figure 1 - ≤ 10 µ -55 - ° Ω ...

Page 4

... Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET 03nm54 = 10 μ 100 μ 100 (V) ...

Page 5

... °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET Min Typ Max 100 - - ...

Page 6

... V (V) DS Fig 6. 03nm48 75 100 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET Min Typ - 0.85 - 114 = 25 ° 196 Drain-source on-state resistance as a function of drain current; typical values − ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03nm52 Label 120 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET 2.5 (V) 2.0 max 1.5 typ min 1.0 0.5 0 − junction temperature 2 ...

Page 8

... D ( 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nm46 1 ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9529-100B separated from data sheet BUK95_9629_100B v.1. BUK95_9629_100B v.1 20030418 (9397 750 11249) BUK9529-100B ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 February 2011 BUK9529-100B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 February 2011 Document identifier: BUK9529-100B ...

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