BUK9529-100B NXP Semiconductors, BUK9529-100B Datasheet - Page 2

• Manufacturer Part Number: BUK9529-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9529-100B
Product data sheet
Pin
1
2
3
mb
Type number
BUK9529-100B
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2011
Simplified outline
SOT78A (TO-220AB)
Conditions
I
R
T
V
see
D
…continued
j(init)
GS
DS
GS
= 46 A; V
Figure 13
= 5 V; I
= 80 V; T
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
D
sup
= 25 A;
j
GS
= 25 °C;
≤ 100 V;
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9529-100B
mbb076
G
Min
-
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
-
13
Version
SOT78A
Max Unit
152
-
2 of 13
mJ
nC