BUK9E08-55B NXP Semiconductors, BUK9E08-55B Datasheet
BUK9E08-55B
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BUK9E08-55B Summary of contents
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... BUK9E08-55B N-channel TrenchMOS logic level FET Rev. 03 — 31 May 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... DS see Figure 13 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol ...
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... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET Min Typ Max - - - [ [2] 1 ...
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... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nn55 = 10 μ ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration BUK9E08-55B Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET Min Typ - - - 60 03nn56 t p δ ...
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... °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 ...
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... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage ...
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... Fig 10. Gate-source threshold voltage as a function of 03nn53 Label 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2.0 max 1.5 typ min 1.0 0.5 0 − ...
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... 175 ° 0.0 0.5 All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET 6000 C iss C (pF) 4000 C oss 2000 C rss 0 −2 − function of drain-source voltage; typical ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2010. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK9E08-55B separated from data sheet BUK95_96_9E08_55B-02. Product data sheet All information provided in this document is subject to legal disclaimers. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 31 May 2010 BUK9E08-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 May 2010 Document identifier: BUK9E08-55B ...