BUK9E08-55B NXP Semiconductors, BUK9E08-55B Datasheet - Page 4

• Manufacturer Part Number: BUK9E08-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9E08-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I D
120
80
40
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
Capped at 75 A due to package
1
3
2
1
Capped at 75 A due to package
Limit R
100
DSon
= V
150
DS
/I
All information provided in this document is subject to legal disclaimers.
T
D
mb
03nn57
(°C)
200
Rev. 03 — 31 May 2010
10
Fig 2.
DC
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
V
DS
N-channel TrenchMOS logic level FET
(V)
50
t
100 μ s
1 ms
10 ms
100 ms
p
BUK9E08-55B
= 10 μ s
100
03nn55
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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