NX2301P NXP Semiconductors, NX2301P Datasheet
NX2301P
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NX2301P Summary of contents
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... NX2301P P-channel Trench MOSFET Rev. 1 — 26 October 2010 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1 Very fast switching Trench MOSFET technology AEC-Q101 qualified 1 ...
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... amb T amb = 25 °C; peak drain current T amb single pulse; t All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET Simplified outline Graphic symbol [1] Marking code MG* Min - - [ ° 100 ° ...
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... I der (%) −75 − × ------------------- - I = 100 % der 25°C Normalized continuous drain current as a function of ambient temperature NX2301P Max Unit 400 mW 710 mW 2.8 W °C 150 °C +150 °C +150 −0 ≤ 017aaa002 125 175 T (°C) amb © ...
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... Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET 017aaa095 (1) (2) (3) (4) (5) −10 V (V) DS ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX2301P Product data sheet − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET 017aaa096 (s) p 017aaa097 2 10 ...
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... − −2 − −4 − − Ω −4 Ω − [ NX2301P Typ Max Unit - - V −0.75 −1.1 V −1 μA - ±100 - nA 100 120 mΩ - 180 mΩ 155 190 mΩ 210 270 mΩ 4 4.5 ...
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... Sub-threshold drain current as a function of gate-source voltage 0.4 R Dson (Ω) 0.3 0.2 0.1 0.0 −2.0 −4.0 0.0 = − 125 °C (1) T amb = 25 °C (2) T amb Drain-source on-state resistance as a function of gate-source voltage; typical values NX2301P 017aaa099 (3) −1.5 V (V) GS 017aaa101 (1) (2) −6.0 −8.0 V (V) GS © NXP B.V. 2010. All rights reserved ...
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... MHz iss oss rss capacitances as a function of drain-source voltage; typical values NX2301P 017aaa103 180 T (°C) amb 017aaa105 − (V) DS © NXP B.V. 2010. All rights reserved ...
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... °C Fig 15. Gate charge waveform definitions −1 (A) −0.75 (1) −0.5 −0.25 0.0 −0.25 −0.5 0.0 All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 ...
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... NX2301P Product data sheet P duty cycle δ All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET 006aaa812 © NXP B.V. 2010. All rights reserved ...
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... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION SOT23 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET solder lands solder resist 2 solder paste occupied area 0.6 (3×) Dimensions in mm solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering © ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX2301P v.1 20101026 NX2301P Product data sheet Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET Change notice ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 NX2301P P-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NX2301P All rights reserved. Date of release: 26 October 2010 Document identifier: NX2301P ...