NX2301P NXP Semiconductors, NX2301P Datasheet - Page 2

• Manufacturer Part Number: NX2301P
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
NX2301P
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number Package
NX2301P
Type number
NX2301P
Symbol
V
V
I
I
D
DM
DS
GS
* = placeholder for manufacturing site code
Symbol
G
S
D
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
TO-236AB plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Description
gate
source
drain
Rev. 1 — 26 October 2010
Description
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= −4.5 V
= 25 °C
= 25 °C
= 25 °C;
= 25 °C
= 100 °C
Marking code
MG*
p
≤ 10 μs
Simplified outline
20 V, 2 A P-channel Trench MOSFET
1
[1]
[1]
3
Min
-
-
-
-
-
2
Graphic symbol
NX2301P
© NXP B.V. 2010. All rights reserved.
Max
−20
±8
−2
−1.2
−6
G
017aaa094
Version
SOT23
D
S
Unit
V
V
A
A
A
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