NX3008PBKV NXP Semiconductors, NX3008PBKV Datasheet
NX3008PBKV
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NX3008PBKV Summary of contents
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... NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 — 29 July 2011 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ...
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... Simplified outline SOT666 (SOT666) Description plastic surface-mounted package; 6 leads Marking code AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV Graphic symbol Version SOT666 [1] © NXP B.V. 2011. All rights reserved. G2 017aaa260 ...
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... °C; single pulse; t amb °C amb ° °C amb °C amb HBM All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV Min Max - - [1] - -220 [1] - -140 ≤ 10 µs - -0.9 p [2] - 330 ...
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... Product data sheet 001aao121 75 125 175 T (°C) j Fig drain mounting pad All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET 120 I der (%) -75 - Normalized continuous drain current as a function of junction temperature ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKV Product data sheet 30 V, 220 mA dual P-channel Trench MOSFET Conditions in free air in free air − All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV Min Typ Max [ 250 [1] - 330 380 [2] ...
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... Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKV Product data sheet 30 V, 220 mA dual P-channel Trench MOSFET − All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV 017aaa065 (s) p © NXP B.V. 2011. All rights reserved ...
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... MHz ° 250 Ω - Ω °C G(ext -200 mA All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV Min Typ - °C -0.6 -0 -0.2 - -0.2 - - ° ...
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... (V) DS Fig 7. 001aao258 R (4) (5) (6) -0.15 -0.20 -0.25 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET -3 - (A) (1) (2) -4 -10 -5 -10 -6 -10 0.0 -0.5 -1 ° (1) minimum values ...
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... Fig 11. Normalized drain-source on-state resistance as 001aao262 10 C (pF) 120 180 T (˚C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET - 120 a function of junction temperature; typical values 2 (1) 10 (2) (3) ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions -0. (A) -0.20 -0.15 (1) -0.10 -0.05 0.00 0.0 -0.4 -0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 001aao265 (2) -1 ...
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... NX3008PBKV Product data sheet 30 V, 220 mA dual P-channel Trench MOSFET duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV © NXP B.V. 2011. All rights reserved ...
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... 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET detail 0.1 0.1 EUROPEAN PROJECTION SOT666 X ISSUE DATE 04-11-08 06-03-16 © NXP B.V. 2011. All rights reserved. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV solder lands 0.3 0.25 placement area (2×) (2×) solder paste occupied area 0.375 Dimensions in mm (4×) (4×) sot666_fr © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date NX3008PBKV v.1 20110729 NX3008PBKV Product data sheet 30 V, 220 mA dual P-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 NX3008PBKV © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 July 2011 Document identifier: NX3008PBKV ...