NX3008PBKV NXP Semiconductors, NX3008PBKV Datasheet - Page 6

• Manufacturer Part Number: NX3008PBKV
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
NX3008PBKV
Product data sheet
Fig 5.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
typical values
FR4 PCB, mounting pad for drain 1 cm
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−3
duty cycle = 1
0.25
0.5
0.1
0
0.75
0.33
0.05
0.2
0.02
0.01
10
−2
All information provided in this document is subject to legal disclaimers.
10
−1
2
Rev. 1 — 29 July 2011
1
30 V, 220 mA dual P-channel Trench MOSFET
10
NX3008PBKV
10
2
t
p
© NXP B.V. 2011. All rights reserved.
(s)
017aaa065
10
3
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