PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet
PMDPB65UP
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PMDPB65UP Summary of contents
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... PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Rev. 2 — 8 March 2011 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ...
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... GS amb 100 °C GS amb °C; single pulse; t amb °C amb °C sp All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP Graphic symbol 017aaa062 Version SOT1118 Min Max - - [1] - -3.5 [1] - -2.7 ≤ ...
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... Product data sheet Conditions °C amb HBM 100 pF 1.5 kΩ 017aaa001 75 125 175 T (°C) amb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET Min - -55 -65 [1] - [3] - 120 I der (%) − ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm PMDPB65UP Product data sheet = −1 2 Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET 017aaa066 (1) (2) (3) (4) (5) (6) −10 V (V) DS ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDPB65UP Product data sheet 20 V, 3.5 A dual P-channel Trench MOSFET − − All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 017aaa067 (s) p 017aaa068 ...
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... - Ω °C G(ext -1 ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP Min Typ Max Unit - -0.4 -0 µ -10 µ µ ...
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... DS Fig 7. 017aaa071 (2) (3) (4) (5) (6) −4.0 −5.0 −6.0 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET −3 − (A) (1) (2) −4 −10 −5 −10 −0.4 −0.8 0.0 = − °C; V ...
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... Fig 11. Normalized drain-source on-state resistance as 017aaa075 120 180 T (°C) amb GS Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET 2.0 a 1.5 1.0 0.5 0.0 − function of ambient temperature; typical ...
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... °C amb Fig 15. Gate charge waveform definitions −6 (A) −4.0 (1) −2.0 0.0 −0.4 −0.8 0.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 ...
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... 0.77 2.1 1.1 0.54 0.3 0.65 0.1 0.57 1.9 0.9 0.44 0.2 References JEDEC JEITA - - - All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET detail (8× 0.05 0.05 European projection SOT1118 sot1118_po Issue date 10-08-03 10-08-16 © NXP B.V. 2011. All rights reserved. ...
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... Product data sheet 2.1 0.65 0.65 0.49 0.49 0.35 0.72 (6×) (2×) 0.45 0.82 (6×) (2×) All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET 0.3 0.4 (6×) (6×) solder lands solder paste 1.05 1.15 (2×) (2×) solder resist occupied area Dimensions in mm sot1118_fr © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 10. Revision history Table 8. Revision history Document ID Release date PMDPB65UP v.2 20110308 • Modifications: 2 “Pinning PMDPB65UP v.1 20110118 PMDPB65UP Product data sheet 20 V, 3.5 A dual P-channel Trench MOSFET Data sheet status Product data sheet information”: corrected. Product data sheet All information provided in this document is subject to legal disclaimers. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 8 March 2011 PMDPB65UP 20 V, 3.5 A dual P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 8 March 2011 Document identifier: PMDPB65UP ...