PMK30EP NXP Semiconductors, PMK30EP Datasheet
PMK30EP
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PMK30EP Summary of contents
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... PMK30EP P-channel TrenchMOS extremely low level FET Rev. 04 — 25 October 2010 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... °C; see Figure °C sp ≤ 10 µ °C; pulsed All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP Graphic symbol 001aaa025 Version SOT96-1 Min Max - - kΩ - -30 -20 20 Figure 1 ...
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... T (°C) j Fig −1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP P-channel TrenchMOS extremely low level FET 120 der 100 Normalized total power dissipation as a function of solder point temperature = 10 μs ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration PMK30EP Product data sheet P-channel TrenchMOS extremely low level FET Conditions see Figure 4 −2 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP Min Typ Max - - 18 003aab617 t p δ ...
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... Figure Ω - - Ω °C G(ext -3. ° see Figure 14 All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP Min Typ Max - - -0 -3 -10 - ...
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... T (° Fig 8. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP = 150 °C 25 ° −1 −2 − > DSon ...
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... T (°C) j Fig 10. Drain-source on-state resistance as a function 003aab624 37 (nC0 °C j Fig 12. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP 100 (V) = − −10 − ° drain current; typical values ...
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... C oss C rss −10 − (V) DS Fig 14. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP = 150 °C 25 ° −5 0 −0.4 −0.8 −1 voltage; typical values 003aab622 − ...
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... P-channel TrenchMOS extremely low level FET θ detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.016 0.024 EUROPEAN PROJECTION PMK30EP SOT96 (1) θ 0.7 0 0.028 0.004 0.012 ISSUE DATE 99-12-27 03-02-18 © NXP B.V. 2010. All rights reserved ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PMK30EP v.4 20101025 • Modifications: Various changes to content. PMK30EP v.3 20100429 PMK30EP Product data sheet P-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 25 October 2010 PMK30EP Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMK30EP All rights reserved. Date of release: 25 October 2010 Document identifier: PMK30EP ...