PMK30EP NXP Semiconductors, PMK30EP Datasheet - Page 8

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PMK30EP

Manufacturer Part Number
PMK30EP
Description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMK30EP
Manufacturer:
NXP
Quantity:
51 000
NXP Semiconductors
PMK30EP
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
−10
4
3
2
as a function of drain-source voltage; typical
values
V
−1
GS
= 0 V; f = 1 MHz
−1
−10
V
All information provided in this document is subject to legal disclaimers.
DS
C
C
C
003aab623
oss
rss
iss
(V)
−10
Rev. 04 — 25 October 2010
2
Fig 14. Source current as a function of source-drain
(A)
I
P-channel TrenchMOS extremely low level FET
S
−25
−20
−15
−10
−5
0
voltage; typical values
V
0
GS
= 0 V
T
j
= 150 °C
−0.4
−0.8
25 °C
PMK30EP
−1.2
© NXP B.V. 2010. All rights reserved.
V
003aab622
SD
(V)
−1.6
8 of 13

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