PMZB670UPE NXP Semiconductors, PMZB670UPE Datasheet - Page 11

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMZB670UPE

Manufacturer Part Number
PMZB670UPE
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMZB670UPE
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PMZB670UPE,315
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
9. Package outline
10. Soldering
PMZB670UPE
Product data sheet
Fig 19. Package outline SOT883B
Fig 20. Reflow soldering footprint for SOT883B
Footprint information for reflow soldering
solder land
solder paste deposit
occupied area
solder land plus solder paste
solder resist
Dimensions in mm
1.05
0.95
Dimensions in mm
0.9
0.65
0.25
(2x)
All information provided in this document is subject to legal disclaimers.
1
0.65
0.55
0.35
0.55
0.47
3
Rev. 2 — 7 February 2012
(2x)
(2x)
0.3
0.4
2
0.20
0.12
0.30
0.22
0.30
0.22
1.3
0.7
0.4
0.3
0.40
0.34
20 V, single P-channel Trench MOSFET
0.6
0.04 max
R0.05 (8x)
0.7
11-11-02
PMZB670UPE
© NXP B.V. 2012. All rights reserved.
sot883b_fr
SOT883B
11 of 15

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