PMZB670UPE NXP Semiconductors, PMZB670UPE Datasheet - Page 3

• Manufacturer Part Number: PMZB670UPE
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
PMZB670UPE
Product data sheet
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
ESD maximum rating
V
D
DM
S
Fig 2.
j
amb
stg
DS
GS
tot
ESD
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
P
(%)
der
120
80
40
0
−75
function of junction temperature
Normalized total power dissipation as a
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
−25
25
75
125
All information provided in this document is subject to legal disclaimers.
017aaa123
T
j
(°C)
175
Rev. 2 — 7 February 2012
Conditions
T
V
V
T
T
T
T
HBM
j
amb
amb
sp
amb
GS
GS
= 25 °C
= 25 °C
= -4.5 V; T
= -4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Fig 3.
amb
amb
(%)
I
der
120
= 25 °C
= 100 °C
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
20 V, single P-channel Trench MOSFET
p
≤ 10 µs
−25
2
25
.
PMZB670UPE
[1]
[1]
[2]
[1]
[1]
[3]
75
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
-
-
© NXP B.V. 2012. All rights reserved.
125
017aaa124
T
j
150
150
150
Max
-20
8
-680
-425
-2.7
360
715
2700
-680
2000
(°C)
175
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
V
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