PSMN027-100BS NXP Semiconductors, PSMN027-100BS Datasheet - Page 6

• Manufacturer Part Number: PSMN027-100BS
• Description: Standard level N-channel MOSFET in D2PAK package qualified to 175C
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN027-100BS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
3000
2000
1000
C
(S)
g
60
45
30
15
fs
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
…continued
20
5
V
GS
30
(V)
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003aae046
003aae047
I
D
C
C
Conditions
I
see
I
V
(A)
S
S
iss
rss
DS
= 15 A; V
= 10 A; dI
Figure 17
= 50 V
40
10
Rev. 2 — 1 March 2012
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.
GS
S
/dt = 100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
R
(mΩ)
j
(A)
I
DSon
= 25 °C;
D
120
40
30
20
10
90
60
30
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
GS
= 0 V;
5
PSMN027-100BS
2
T
j
= 175 ° C
Min
-
-
-
10
4
Typ
0.8
47
91
15
© NXP B.V. 2012. All rights reserved.
T
V
j
GS
003aae045
003aae049
V
= 25 ° C
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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