PSMN027-100XS,127 NXP Semiconductors, PSMN027-100XS,127 Datasheet

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PSMN027-100XS,127

Manufacturer Part Number
PSMN027-100XS,127
Description
MOSFET N-CH 100V 26.8 MOHMS STD LVL MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN027-100XS127.pdf (15 pages)

Specifications of PSMN027-100XS,127

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23.4 A
Resistance Drain-source Rds (on)
26.8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220F
Minimum Operating Temperature
- 55 C
Power Dissipation
41.1 W
Factory Pack Quantity
50
1. Product profile
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state resistance
gate-drain charge
total gate charge
non-repetitive drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
PSMN027-100XS
N-channel 100V 26.8 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 2 — 6 March 2012
High efficiency due to low switching
and conduction losses
AC-to-DC power supply equipment
Motor control
Conditions
T
T
T
V
see
V
see
V
V
see
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
Figure
Figure
Figure 3
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; T
≤ 100 V; unclamped; R
12; see
14; see
j
D
D
j(init)
≤ 175 °C
GS
= 5 A; T
= 5 A; V
Figure 2
= 25 °C; I
= 10 V; see
Figure 13
Figure 15
j
DS
= 25 °C;
= 50 V;
D
GS
= 23.4 A;
Figure 1
= 50 Ω;
Isolated package
Suitable for standard level gate drive
Server power supplies
Synchronous rectification
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
21
9.5
30
-
Max
100
23.4
41.1
26.8
-
-
69
Unit
V
A
W
mΩ
nC
nC
mJ

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PSMN027-100XS,127 Summary of contents

Page 1

... PSMN027-100XS N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Rev. 2 — 6 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... SOT186A (TO-220F) Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS Graphic symbol mbb076 Version SOT186A © NXP B.V. 2012. All rights reserved. ...

Page 3

... Figure 3 003aag628 120 P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS Min - = 20 kΩ - -20 Figure 1 - Figure 1 - Figure - Ω ...

Page 4

... N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A ( All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS 003aag629 (1) ( (ms) AL =10 μ 100 μ 100 (V) DS © ...

Page 5

... N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Conditions see vertical in free air - Conditions 50 Hz ≤ f ≤ 60 Hz; RH ≤ sinusoidal waveform; clean and dust free All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS Min Typ Figure ...

Page 6

... °C; see Figure 16; j see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS Min Typ = 25 °C 100 - j = -55 ° ° 100 °C ...

Page 7

... V (V) DS Fig 7. 003aag634 60 80 100 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS Min Typ = 25 ° 100 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... Fig 11. Sub-threshold drain current as a function of 003aag637 6.0 7 100 I (A) D Fig 13. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS − (A) min typ −2 10 −3 10 −4 10 −5 10 −6 10 ...

Page 9

... Fig 15. Gate-source voltage as a function of gate 003aag639 (pF) C iss C oss C rss (V) DS Fig 17. Input and reverse transfer capacitances as a All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS (V) 80V 8 50V V = 20V charge ...

Page 10

... N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) 100 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS 003aag640 = 25 ° 1.2 1.5 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 11

... scale 0.7 15.8 6.5 10.3 2.7 2.54 5.08 0.4 15.2 6.3 9.7 1.7 REFERENCES JEDEC JEITA 3-lead TO-220F All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS mounting base ( max. 0.6 14.4 3.30 3.2 2.6 3 0.4 13.5 2.79 3.0 2.3 EUROPEAN PROJECTION SOT186A ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN027-100XS v.2 20120306 • Modifications: Status changed from preliminary to product. • Various changes to content. PSMN027-100XS v.1 20110926 PSMN027-100XS Product data sheet N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A) Data sheet status Product data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 6 March 2012 PSMN027-100XS © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PSMN027-100XS All rights reserved. Date of release: 6 March 2012 Document identifier: PSMN027-100XS ...

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