PSMN027-100XS,127 NXP Semiconductors, PSMN027-100XS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN027-100XS,127
• Description: MOSFET N-CH 100V 26.8 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN027-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23.4 A
• Resistance Drain-source Rds (on): 26.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 41.1 W
• Factory Pack Quantity: 50

NXP Semiconductors
Table 7.
PSMN027-100XS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
(A)
(S)
I
g
D
100
60
50
40
30
20
10
fs
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics; drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
1
40
2
V
…continued
GS
(V) = 10
60
3
N-channel 100V 26.8 mΩ standard level MOSFET in TO220F (SOT186A)
80
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4
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V
I
D
DS
(A)
(V)
5.5
6.0
see
7.0
4.6
Conditions
I
I
V
5.0
4.8
4.4
S
S
100
GS
= 10 A; V
= 10 A; dI
5
Rev. 2 — 6 March 2012
Figure 18
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 7.
Fig 9.
= 50 V
R
(m Ω )
DSon
(A)
I
100
D
80
60
40
20
60
40
20
j
0
0
= 25 °C;
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics; drain current as a
4
0
8
2
PSMN027-100XS
T
j
= 175 ° C
Min
-
-
-
12
4
T
j
Typ
0.82
42
73
= 25 ° C
16
6
© NXP B.V. 2012. All rights reserved.
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V
V
GS
GS
Max
1.2
-
-
(V)
(V)
20
8
Unit
V
ns
nC
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