PSMN030-150P NXP Semiconductors, PSMN030-150P Datasheet - Page 8

• Manufacturer Part Number: PSMN030-150P
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN030-150P
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate-source voltage as a function of gate
(A)
I
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
= 25 °C; V
= 25 °C; I
20
minimum
1
40
D
V
DS
DD
= 55.5 A
= V
= 30 V
2
60
GS
80
typical
3
100
V
DD
maximum
All information provided in this document is subject to legal disclaimers.
4
= 120 V
120
003aaf060
V
003aaf062
Q
GS
G
(V)
(nC)
Rev. 02 — 16 December 2010
140
5
N-channel TrenchMOS SiliconMAX standard level FET
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source (diode forward) current as a function of
(pF)
(A)
I
C
F
10
10
10
50
40
30
20
10
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
= 0 V; f = 1 MHz
= 0 V
0.4
T
1
j
= 175 °C
PSMN030-150P
0.8
10
C
C
C
oss
iss
rss
T
V
V
© NXP B.V. 2010. All rights reserved.
j
SDS
DS
= 25 °C
003aaf061
003aaf063
(V)
(V)
10
1.2
2
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