PSMN057-200P NXP Semiconductors, PSMN057-200P Datasheet
PSMN057-200P
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PSMN057-200P Summary of contents
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... PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Graphic symbol mbb076 Version SOT78 © NXP B.V. 2011. All rights reserved ...
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... I D (%) 150 200 0 T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Min - = 20 kΩ - -55 - ° 100 µs; ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P 2 10 prior to avalanche = 150 ° −3 −2 − unclamped inductive load Single-shot avalanche rating; avalanche ...
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... Z th(j-mb) δ = 0.5 (K/W) 0.2 −1 10 0.1 0.05 P 0.02 −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Min Typ - - - 60 003aae617 t p δ −2 − (s) p Max Unit 0.6 K/W - K/W © NXP B.V. 2011. All rights reserved. ...
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... ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Min Typ Max 178 - - 200 - - - - 0.03 10 ...
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... DS Fig 7. 003aae620 = 25 ° (V) GS Fig 9. 003aae622 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P 0.14 4.2 4.4 4.6 R DS(on) (Ω) 0.10 4.8 5 0.06 0. °C j Drain-source on-state resistance as a function of drain current; typical values ...
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... GS Fig 13. Input, output and reverse transfer capacitances 003aae626 V = 160 V DD 120 160 Q (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P (pF − MHz function of drain-source voltage ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN057-200P v.2 20110104 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 January 2011 Document identifier: PSMN057-200P ...