PSMN057-200P,127 NXP Semiconductors, PSMN057-200P,127 Datasheet

MOSFET N-CH 200V 39A SOT78

PSMN057-200P,127

Manufacturer Part Number
PSMN057-200P,127
Description
MOSFET N-CH 200V 39A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN057-200P,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
96nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
39A
Drain To Source Voltage (vdss)
200V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
57 mOhm @ 17A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.057 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
39 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056421127::PSMN057-200P::PSMN057-200P

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN057-200P,127
Manufacturer:
IR
Quantity:
95
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 4 January 2011
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC converters
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
T
V
T
V
V
j
mb
j
GS
GS
DS
≥ 25 °C; T
= 25 °C
= 25 °C
= 160 V; T
= 10 V; I
= 10 V; I
j
D
D
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
≤ 175 °C
= 17 A;
= 39 A;
j
= 25 °C
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
41
37
Max Unit
200
39
250
57
50
V
A
W
mΩ
nC

Related parts for PSMN057-200P,127

PSMN057-200P,127 Summary of contents

Page 1

... PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... N-channel TrenchMOS SiliconMAX standard level FET Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Graphic symbol mbb076 Version SOT78 © NXP B.V. 2011. All rights reserved ...

Page 3

... R j(init) 003aae614 100 I D (%) 150 200 0 T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Min - = 20 kΩ - -55 - ° 100 µ Ω; unclamped ...

Page 4

... AS ( μs 100 μ 100 (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P 2 10 prior to avalanche = 150 ° −3 −2 − unclamped inductive load Single-shot avalanche rating; avalanche current as a function of avalanche period 003aae628 25 ° ...

Page 5

... P 0.02 −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Min Typ - - - 60 003aae617 t p δ −2 − (s) p Max Unit 0.6 K/W ...

Page 6

... °C j measured from tab to centre of die ; °C j measured from source lead to source bond pad ; ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Min Typ Max 178 - - 200 - - - - 0. 500 - 2 100 - 2 100 ...

Page 7

... Fig 7. 003aae620 = 25 ° (V) GS Fig 9. 003aae622 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P 0.14 4.2 4.4 4.6 R DS(on) (Ω) 0.10 4.8 5 0.06 0. °C j Drain-source on-state resistance as a function of drain current ...

Page 8

... V (V) GS Fig 13. Input, output and reverse transfer capacitances 003aae626 V = 160 V DD 120 160 Q (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P (pF − MHz function of drain-source voltage; typical ...

Page 9

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN057-200P v.2 20110104 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 4 January 2011 PSMN057-200P Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 January 2011 Document identifier: PSMN057-200P ...

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