PSMN057-200P,127 NXP Semiconductors, PSMN057-200P,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN057-200P,127
• Description: MOSFET N-CH 200V 39A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN057-200P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 39A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 57 mOhm @ 17A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056421127::PSMN057-200P::PSMN057-200P

NXP Semiconductors
8. Revision history
Table 7.
PSMN057-200P
Product data sheet
Document ID
PSMN057-200P v.2
Modifications:
PSMN057-200P v.1
Revision history
20110104
20000601
Release date
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 January 2011
Data sheet status
Product data sheet
Product specification
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN057-200P
Supersedes
PSMN057-200P v.1
-
© NXP B.V. 2011. All rights reserved.
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