PSMN057-200P,127 NXP Semiconductors, PSMN057-200P,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN057-200P,127
• Description: MOSFET N-CH 200V 39A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN057-200P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 39A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 57 mOhm @ 17A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056421127::PSMN057-200P::PSMN057-200P

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN057-200P
Product data sheet
Pin
1
2
3
mb
Type number
PSMN057-200P
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 January 2011
Simplified outline
SOT78 (TO-220AB)
N-channel TrenchMOS SiliconMAX standard level FET
1 2
mb
3
Graphic symbol
PSMN057-200P
mbb076
G
© NXP B.V. 2011. All rights reserved.
D
S
Version
SOT78
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