PSMN057-200P,127 NXP Semiconductors, PSMN057-200P,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN057-200P,127
• Description: MOSFET N-CH 200V 39A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN057-200P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 39A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 57 mOhm @ 17A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056421127::PSMN057-200P::PSMN057-200P

NXP Semiconductors
PSMN057-200P
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate-source voltage as a function of gate
(A)
l
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
= 25 °C; V
= 25 °C; I
minimum
1
40
V
D
DD
DS
= 39 A
= 40 V
= V
2
GS
80
typical
3
V
DD
120
= 160 V
maximum
All information provided in this document is subject to legal disclaimers.
4
Q
003aae624
003aae626
V
G
GS
(nC)
(V)
160
Rev. 02 — 4 January 2011
5
N-channel TrenchMOS SiliconMAX standard level FET
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source (diode forward) current as a function of
(A)
I
(pF)
F
10
10
10
C
40
30
20
10
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
= 0 V; f = 1 MHz
= 0 V
T
j
= 175 °C
0.4
1
PSMN057-200P
0.8
10
T
V
j
V
© NXP B.V. 2011. All rights reserved.
= 25 °C
SDS
DS
003aae625
003aae627
(V)
(V)
C
C
C
oss
rss
iss
10
1.2
2
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