PSMN057-200P,127 NXP Semiconductors, PSMN057-200P,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN057-200P,127
• Description: MOSFET N-CH 200V 39A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN057-200P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 39A
• Drain To Source Voltage (vdss): 200V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 57 mOhm @ 17A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.057 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056421127::PSMN057-200P::PSMN057-200P

NXP Semiconductors
PSMN057-200P
Product data sheet
Fig 3.
I
(A)
DM
10
10
10
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
1
mb
R
DS(on)
= 25 °C; I
= V
DS
10
DM
/ I
D
is single pulse
DC
10
2
V
100 μs
1 ms
10 ms
100 ms
All information provided in this document is subject to legal disclaimers.
tp = 10 μs
DS
003aae616
(V)
10
Rev. 02 — 4 January 2011
3
N-channel TrenchMOS SiliconMAX standard level FET
Fig 4.
l
(A)
AS
10
10
1
2
10
current as a function of avalanche period
unclamped inductive load
Single-shot avalanche rating; avalanche
−3
T
j
prior to avalanche = 150 °C
10
−2
PSMN057-200P
10
−1
1
© NXP B.V. 2011. All rights reserved.
25 °C
t
AV
003aae628
(ms)
10
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