PSMN2R6-40YS NXP Semiconductors, PSMN2R6-40YS Datasheet - Page 9

• Manufacturer Part Number: PSMN2R6-40YS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN2R6-40YS_1
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
32V
8V
40
(A)
I
S
100
80
60
40
20
V
60
0
DS
0
= 20V
Q
003aad194
G
(nC)
T
j
= 175 °C
80
Rev. 01 — 23 June 2009
0.3
T
j
= 150 °C
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
0.9
4
3
2
T
10
as a function of drain-source voltage; typical
values
j
= 25 °C
-1
V
003aad193
SD
(V)
1.2
1
PSMN2R6-40YS
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad195
(V)
C
C
C
oss
iss
rss
10
2
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