BLA0912-250R NXP Semiconductors, BLA0912-250R Datasheet

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap

BLA0912-250R

Manufacturer Part Number
BLA0912-250R
Description
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLA0912-250R,112
Manufacturer:
NXP
Quantity:
1 400
1. Product profile
Table 1.
Typical RF performance measured in common source class-AB test circuit at P
frequency band. T
Mode of operation
all modes
TCAS
Mode-S
JTIDS
CAUTION
Test information
h
1.1 General description
1.2 Features and benefits
1.3 Applications
= 25
f
(MHz)
960 to 1215
1030 to 1090
1030 to 1090
1030 to 1090
960 to 1215
°
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
C; Z
BLA0912-250R
Avionics LDMOS power transistor
Rev. 3 — 1 December 2010
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
th(j-h)
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
= 0.15 K/W; unless otherwise specified.
t
(μs)
100
32
128
340
3300 22
p
δ
%
10
0.1 36
2
1
V
(V)
36
36
36
36
DS
P
(W) (dB) (dB) (%) (dB)
250 13.5 0.8
250 14.0 0.8
250 13.5 0.8
250 13.5 0.8
200 13.0 1.2
L
G
p
ΔG
p
η
50
50
50
50
45
D
L
= 250 W and 960 MHz to 1215 MHz
P
0.1
0
0.1
0.2
0.2
droop(pulse)
25
25
25
25
25
t
(ns) (ns) (K/W)
r
Product data sheet
t
6
6
6
6
6
f
Z
0.18
0.07
0.15
0.20
0.45
th(j-h)
ϕ
(deg)
±5
±5
±5
±5
±5
ins(rel)

Related parts for BLA0912-250R

BLA0912-250R Summary of contents

Page 1

... BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at P ° ...

Page 2

... T h storage temperature junction temperature Thermal characteristics Parameter transient thermal impedance from junction to heatsink All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor Simplified outline Graphic symbol 1 3 [1] 2 Min - - = 50 μ ...

Page 3

... Ruggedness in class-AB operation The BLA0912-250R is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 960 MHz to 1215 MHz at rated load power. BLA0912-250R Product data sheet DC characteristics C; per section unless otherwise specified. ...

Page 4

... Definition of transistor impedance See Table 9 for details of striplines. Layout of class-AB application circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor Z L Ω 1.53 − j1.13 1.47 − j0.99 1.38 − j0.85 1.30 − j0.71 1.17 − j0.47 drain ...

Page 5

... All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor ε = 10.2 F/m; r © NXP B.V. 2010. All rights reserved ...

Page 6

... SMD capacitor multilayer ceramic chip capacitor 56 pF multilayer ceramic chip capacitor 47 pF tantalum SMD capacitor SMD resistor resistor All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor C10 Value Remarks [1] [2] 47 μ ...

Page 7

... Product data sheet 001aab078 55 η D (%) G 45 (dB 1140 1190 1240 f (MHz) = 150 mA; class-AB; Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor = 25 ° 0.15 K/W; unless h th(j-h) 18 ( (1) (4) ( ...

Page 8

... BLA0912-250R Product data sheet 001aab080 (2) η (1) (%) ( ( 150 mA; class-AB; Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor 60 (5) ( (4) (2) ( 100 150 200 = 25 ° ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor ...

Page 10

... The value of component C8 has been specified in more detail. Product data sheet Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor Change notice Supersedes - BLA0912-250R v.2 - BLA0912-250R v © NXP B.V. 2010. All rights reserved ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 December 2010 BLA0912-250R Avionics LDMOS power transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 December 2010 Document identifier: BLA0912-250R ...

Related keywords