BLA0912-250,112 NXP Semiconductors, BLA0912-250,112 Datasheet

TRANS LDMOS NCH 75V SOT502A

BLA0912-250,112

Manufacturer Part Number
BLA0912-250,112
Description
TRANS LDMOS NCH 75V SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA0912-250,112

Transistor Type
LDMOS
Frequency
960MHz ~ 1.22GHz
Gain
13dB
Voltage - Rated
75V
Current Rating
1µA
Voltage - Test
36V
Power - Output
250W
Package / Case
SOT502A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
Avionics
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
75V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
13@36VdB
Frequency (min)
960MHz
Frequency (max)
1.215GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
9S
Drain Source Resistance (max)
60(Typ)@9Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Screw
Mode Of Operation
Class-AB
Number Of Elements
1
Power Dissipation (max)
700000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / Rohs Status
 Details
Other names
934057490112
BLA0912-250
BLA0912-250
1. Product profile
Table 1.
Typical RF performance measured in common source class-AB test circuit at P
frequency band. T
Mode of operation
all modes
TCAS
Mode-S
JTIDS
CAUTION
Test information
h
1.1 General description
1.2 Features and benefits
1.3 Applications
= 25
f
(MHz)
960 to 1215
1030 to 1090
1030 to 1090
1030 to 1090
960 to 1215
°
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
C; Z
BLA0912-250
Avionics LDMOS transistor
Rev. 3 — 26 November 2010
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
th(j-h)
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
= 0.15 K/W; unless otherwise specified.
t
(μs)
100
32
128
340
3300 22
p
δ
%
10
0.1 36
2
1
V
(V)
36
36
36
36
DS
P
(W) (dB) (dB) (%) (dB)
250 13.5 0.8
250 14.0 0.8
250 13.5 0.8
250 13.5 0.8
200 13.0 1.2
L
G
p
ΔG
p
η
50
50
50
50
45
D
L
= 250 W and 960 MHz to 1215 MHz
P
0.1
0
0.1
0.2
0.2
droop(pulse)
25
25
25
25
25
t
(ns) (ns) (K/W)
r
Product data sheet
t
6
6
6
6
6
f
Z
0.18
0.07
0.15
0.20
0.45
th(j-h)
ϕ
(deg)
±5
±5
±5
±5
±5
ins(rel)

Related parts for BLA0912-250,112

BLA0912-250,112 Summary of contents

Page 1

... BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at P ° ...

Page 2

... T h storage temperature junction temperature Thermal characteristics Parameter transient thermal impedance from junction to heatsink All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor Simplified outline Graphic symbol 1 3 [1] 2 Min - - = 50 μs; δ ...

Page 3

... Ruggedness in class-AB operation The BLA0912-250 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 960 MHz to 1215 MHz at rated load power. BLA0912-250 Product data sheet DC characteristics C; per section unless otherwise specified. drain-source breakdown voltage V ...

Page 4

... See Table 9 for details of striplines. Layout of class-AB application circuit All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor Z L Ω 1.53 − j1.13 1.47 − j0.99 1.38 − j0.85 1.30 − j0.71 1.17 − j0.47 ...

Page 5

... All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor ε = 10.2 F/m; r © NXP B.V. 2010. All rights reserved ...

Page 6

... SMD capacitor multilayer ceramic chip capacitor 56 pF multilayer ceramic chip capacitor 47 pF tantalum SMD capacitor SMD resistor resistor All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor C10 Value Remarks [1] [2] 47 μ ...

Page 7

... BLA0912-250 Product data sheet 001aab078 55 η D (%) G 45 (dB 1140 1190 1240 f (MHz) = 150 mA; class-AB; Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor = 25 ° 0.15 K/W; unless h th(j-h) 18 ( (1) (4) ( 100 200 = 25 ° ...

Page 8

... MHz Fig 6. Load power as a function of input power; typical values BLA0912-250 Product data sheet 001aab080 (2) η (1) (%) ( ( 150 mA; class-AB; Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor 60 (5) ( (4) (2) ( 100 150 200 = 25 ° 150 mA ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor 3.38 1.70 34.16 9 ...

Page 10

... TCAS VSWR 11. Revision history Table 12. Revision history Document ID Release date BLA0912-250 v.3 20101126 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 26 November 2010 BLA0912-250 Avionics LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 November 2010 Document identifier: BLA0912-250 ...

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