BLA0912-250,112 NXP Semiconductors, BLA0912-250,112 Datasheet - Page 7

• Manufacturer Part Number: BLA0912-250,112
• Description: TRANS LDMOS NCH 75V SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250,112

• Transistor Type: LDMOS
• Frequency: 960MHz ~ 1.22GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current Rating: 1µA
• Voltage - Test: 36V
• Power - Output: 250W
• Package / Case: SOT502A
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 13@36VdB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 60(Typ)@9Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 700000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Details
• Other names: 934057490112; BLA0912-250; BLA0912-250

NXP Semiconductors
8. Test information
BLA0912-250
Product data sheet
Fig 4.
(dB)
G
p
15
13
11
9
7
5
940
T
t
Power gain and drain efficiency as function of
frequency; typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
990
8.1 RF performance
1040
DS
η
G
= 36 V; I
Typical RF performance measured in common source class-AB test circuit at P
and 960 MHz to 1215 MHz frequency band. T
otherwise specified.
D
p
1090
Dq
= 150 mA; class-AB;
1140
f (MHz)
1190
All information provided in this document is subject to legal disclaimers.
001aab078
Rev. 3 — 26 November 2010
1240
55
45
35
25
15
5
(%)
η
D
Fig 5.
(dB)
G
p
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
18
16
14
12
10
8
6
4
2
0
T
t
Power gain as a function of load power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
h
(2)
= 25 °C; Z
DS
100
(5)
(1)
= 36 V; I
th(j-h)
Avionics LDMOS transistor
BLA0912-250
Dq
= 0.15 K/W; unless
(4) (3)
= 150 mA; class-AB;
200
© NXP B.V. 2010. All rights reserved.
P
L
001aab079
(W)
300
L
= 250 W
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