BLA0912-250,112 NXP Semiconductors, BLA0912-250,112 Datasheet - Page 8

TRANS LDMOS NCH 75V SOT502A

BLA0912-250,112

Manufacturer Part Number
BLA0912-250,112
Description
TRANS LDMOS NCH 75V SOT502A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA0912-250,112

Transistor Type
LDMOS
Frequency
960MHz ~ 1.22GHz
Gain
13dB
Voltage - Rated
75V
Current Rating
1µA
Voltage - Test
36V
Power - Output
250W
Package / Case
SOT502A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
Avionics
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
75V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
13@36VdB
Frequency (min)
960MHz
Frequency (max)
1.215GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
9S
Drain Source Resistance (max)
60(Typ)@9Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Screw
Mode Of Operation
Class-AB
Number Of Elements
1
Power Dissipation (max)
700000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / Rohs Status
 Details
Other names
934057490112
BLA0912-250
BLA0912-250
NXP Semiconductors
BLA0912-250
Product data sheet
Fig 6.
(W)
P
L
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
300
250
200
150
100
50
0
0
T
t
Load power as a function of input power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
2
(5)
4
DS
= 36 V; I
6
8
(3)
Dq
(2)
10
= 150 mA; class-AB;
(4)
12
All information provided in this document is subject to legal disclaimers.
001aab080
P
i
14
(W)
(1)
Rev. 3 — 26 November 2010
16
Fig 7.
(%)
η
D
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
60
50
40
30
20
10
0
0
T
t
Efficiency as a function of load power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
50
DS
100
= 36 V; I
(1)
150
Avionics LDMOS transistor
BLA0912-250
(3)
Dq
= 150 mA; class-AB;
(5)
(2)
200
(4)
© NXP B.V. 2010. All rights reserved.
P
250
L
001aab081
(W)
300
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