BLA0912-250,112 NXP Semiconductors, BLA0912-250,112 Datasheet - Page 3

• Manufacturer Part Number: BLA0912-250,112
• Description: TRANS LDMOS NCH 75V SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250,112

• Transistor Type: LDMOS
• Frequency: 960MHz ~ 1.22GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current Rating: 1µA
• Voltage - Test: 36V
• Power - Output: 250W
• Package / Case: SOT502A
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 13@36VdB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 60(Typ)@9Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 700000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Details
• Other names: 934057490112; BLA0912-250; BLA0912-250

NXP Semiconductors
6. Characteristics
BLA0912-250
Product data sheet
6.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
RF performance in common source class-AB circuit; T
specified.
The BLA0912-250 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
f = 960 MHz to 1215 MHz at rated load power.
Symbol Parameter
V
V
I
I
I
g
R
Symbol
V
f
P
G
η
Z
T
P
α
t
t
DSS
DSX
GSS
r
f
j
fs
D
th(j-h)
h
resp(sp)
(BR)DSS
GS(th)
DS
L
droop(pulse)
DS(on)
p
= 25
°
C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
DC characteristics
RF characteristics
Parameter
drain-source voltage
frequency
output power
power gain
drain efficiency
transient thermal impedance
from junction to heatsink
heatsink temperature
pulse droop power
spurious response
rise time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2010
Conditions
V
V
V
V
V
V
Conditions
t
P
t
t
t
VSWR
GS
DS
GS
GS
DS
GS
DS
GS
p
p
p
p
L
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 100 μs; δ = 10 %
= 250 W
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 20 V; V
= 9 V; I
load
GSth
h
= 25
D
D
= 2 : 1
+ 9 V;
DS
D
D
= 3 mA
= 10 A
DS
= 300 mA
= 10 A
= 36 V
°
C; Z
= 0 V
th
Avionics LDMOS transistor
BLA0912-250
= 0.15 K/W; unless otherwise
Min
-
960
250
12
40
-
−55
-
-
-
-
Min
75
4
-
45
-
-
-
DS
= 36 V;
Typ
-
-
-
13
50
-
-
0.1
-
25
6
© NXP B.V. 2010. All rights reserved.
Typ
-
-
-
-
-
9
60
Max
36
1215
0.2
+70
0.5
−60
50
25
Max Unit
-
5
1
-
1
-
-
Unit
V
MHz
W
dB
%
K/W
°C
dB
dBc
ns
ns
3 of 13
V
V
μA
A
μA
S
mΩ