BLF7G20L-250P NXP Semiconductors, BLF7G20L-250P Datasheet - Page 7

• Manufacturer Part Number: BLF7G20L-250P
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G20L-250P_7G20LS-250P
Product data sheet
Fig 8.
Fig 10. Average power gain and drain efficiency as a
(dB)
(dB)
G
G
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
18.5
18.0
17.5
17.0
16.5
16.0
18.5
18.0
17.5
17.0
16.5
16.0
p
p
10
0
Power gain as a function of average output
power; typical values
function of average output power; typical
values
20
7.5 2-carrier WCDMA characteristics
G
η
D
p
40
50
V
on the CCDF.
DS
60
= 28 V; I
80
90
100
Dq
P
BLF7G20L-250P; BLF7G20LS-250P
(1)
(2)
(3)
L(AV)
= 1900 mA; channel spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability
All information provided in this document is subject to legal disclaimers.
001aam087
120
001aal946
P
L(AV)
(W)
(W)
140
130
Rev. 3 — 1 March 2011
50
40
30
20
10
0
(%)
η
D
Fig 9.
Fig 11. Adjacent channel power ratio (5 MHz) as a
ACPR
(dBc)
(%)
η
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
(1) f = 1805 MHz.
(2) f = 1845 MHz.
(3) f = 1880 MHz.
D
-20
-40
-60
5M
50
40
30
20
10
0
0
0
0
Efficiency as a function of average output
power; typical values
function of average output power;
typical values
(1)
(2)
(3)
20
20
40
40
60
60
(1)
(2)
(3)
Power LDMOS transistor
80
80
100
100
© NXP B.V. 2011. All rights reserved.
120
120
001aal947
P
001aal948
P
L(AV)
L(AV)
(W)
140
140
(W)
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