BLF861A NXP Semiconductors, BLF861A Datasheet - Page 10

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap

BLF861A

Manufacturer Part Number
BLF861A
Description
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
2001 Feb 09
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
T
sync compression: input 33%, output 27%;
measured in broadband test circuit.
Fig.10 Power gain and drain efficiency as functions
T
P
Fig.12 Power gain and drain efficiency as functions
h
h
L
= 25 C; V
= 25 C; V
= 150 W; measured in broadband test circuit.
(dB)
(dB)
G p
G p
16
12
16
12
8
4
8
4
400
400
of frequency; typical values.
of frequency; typical values.
CE
DS
= 32 V; I
= 32 V; I
500
500
DQ
DQ
600
600
= 1 A; PAL BG signal (TV);
= 1 A; CW, class-AB operation;
G p
D
700
700
G p
D
800
800
f (MHz)
f (MHz)
MLD511
MLD513
900
900
80
60
40
20
(%)
80
60
40
20
(%)
D
D
10
handbook, halfpage
P o sync
T
sync compression: input 33%, output 27%;
measured in broadband test circuit.
Fig.11 Peak envelope sync power as a function of
h
(W)
= 25 C; V
250
200
150
100
50
0
400
frequency; typical values.
CE
= 32 V; I
500
DQ
600
= 1 A; PAL BG signal (TV);
700
Product specification
800
BLF861A
f (MHz)
MLD512
900

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