BLF861A NXP Semiconductors, BLF861A Datasheet - Page 5

• Manufacturer Part Number: BLF861A
• Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2001 Feb 09
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
T
2-tone: f
measured in an 860 MHz test circuit.
Fig.5
T
measured in an 860 MHz test circuit.
Fig.7
h
h
(dB)
= 25 C; V
= 25 C; V
(dB)
G p
G p
20
15
10
20
15
10
5
0
5
0
0
0
1
= 860 MHz ( 6 dB); f
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Power gain and drain efficiency as functions
of load power; typical values.
DS
DS
= 32 V; I
= 32 V; I
50
100
DQ
G p
DQ
D
100
= 1 A.
= 1 A; CW, class-AB; f = 860 MHz;
2
= 860.1 MHz ( 6 dB)
G p
D
150
200
P L (PEP) (W)
200
P L (W)
MLD516
MLD514
250
300
80
60
40
20
0
80
60
40
20
0
(%)
(%)
D
D
5
handbook, halfpage
T
2-tone: f
measured in an 860 MHz test circuit.
Fig.6
h
(dBc)
= 25 C; V
d im
20
40
60
80
0
0
1
= 860 MHz ( 6 dB); f
Intermodulation distortion as a function of
peak envelope output power; typical values.
DS
= 32 V; I
100
DQ
= 1 A.
2
= 860.1 MHz ( 6 dB)
200
d 5
d 3
Product specification
P L (PEP) (W)
BLF861A
MLD515
300