BLF888B NXP Semiconductors, BLF888B Datasheet - Page 8

• Manufacturer Part Number: BLF888B
• Description: A 650W LDMOS RF power transistor for DVB-T broadcast applications optimised to give extremely high power and efficiency in Doherty solutions
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF888B_BLF888BS
Product data sheet
7.4 Reliability
Fig 9.
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .
BLF888B; BLF888BS electromigration (I
1
7
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
0
(10)
(11)
(7)
(8)
(9)
All information provided in this document is subject to legal disclaimers.
2
Rev. 1 — 17 October 2011
4
6
8
(1)
(2)
(3)
(4)
(5)
(6)
10
BLF888B; BLF888BS
DS(DC)
12
, total device)
14
UHF power LDMOS transistor
16
18
I
DS(DC)
001aao024
© NXP B.V. 2011. All rights reserved.
(A)
20
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