BLF888BS NXP Semiconductors, BLF888BS Datasheet - Page 3

• Manufacturer Part Number: BLF888BS
• Description: A 650W LDMOS RF power transistor for DVB-T broadcast applications optimised to give extremely high power and efficiency in Doherty solutions
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLF888B_BLF888BS
Product data sheet
Table 5.
[1]
Table 6.
T
[1]
[2]
Table 7.
RF characteristics in NXP production narrowband test circuit; T
specified.
Symbol Parameter
R
Symbol Parameter
V
V
I
I
R
C
C
Symbol
I
C
2-Tone, class-AB
V
I
P
G

IMD3
DSS
DSX
GSS
Dq
j
D
(BR)DSS
GS(th)
DS
L(AV)
th(j-c)
DS(on)
iss
oss
rss
p
= 25
R
I
Capacitance values without internal matching.
D
th(j-c)
is the drain current.

C; per section unless otherwise specified.
is measured under RF conditions.
thermal resistance from junction to case T
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
Thermal characteristics
DC characteristics
RF characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 17 October 2011
Conditions
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
= 8.5 A
BLF888B; BLF888BS
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
Conditions
f
f
f
f
f
f
f
f
Conditions
1
2
1
2
1
2
1
2
GS(th)
GS(th)
case
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
D
= 80 C; P
DS
DS
DS
DS
D
= 2.4 mA
+ 3.75 V;
+ 3.75 V;
DS
= 240 mA
= 50 V
= 50 V;
= 50 V;
= 50 V;
= 0 V
case
UHF power LDMOS transistor
= 25
L(AV)
[1]

[1]
[1]
[1]
[2]
C unless otherwise
= 125 W
Min Typ Max Unit
-
-
250 -
20
42
-
Min Typ Max Unit
104 -
1.4
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
50
1.3
21
46
34 30
1.9
-
38
-
120
210
67
1.35 -
[1]
-
-
-
-
-
Typ Unit
0.15 K/W
-
2.4
2.8
-
280
-
-
-
3 of 17
V
A
W
dB
%
dBc
V
V
A
A
nA
m
pF
pF
pF