BLS6G2731S-130 NXP Semiconductors, BLS6G2731S-130 Datasheet
BLS6G2731S-130
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BLS6G2731S-130 Summary of contents
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... BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLS6G2731S-130 - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol Parameter Z th(j-mb) BLS6G2731S-130 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 November 2010 BLS6G2731S-130 LDMOS S-band radar power transistor Conditions Min Typ = 0 ...
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... NXP Semiconductors Table 8. f (GHz) 2.7 2.8 2.9 3.0 3.1 Fig 1. 7.1 Ruggedness in class-AB operation The BLS6G2731S-130 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 100 mA BLS6G2731S-130 Product data sheet Typical impedance Z S (Ω) 3.2 − j6.5 4.4 − j6.2 5.6 − j7.3 4.9 − j9.2 3 − j9.5 ...
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... Fig 3. 001aan053 (%) (1) (2) (3) 150 200 P ( 300 μs; δ Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 November 2010 BLS6G2731S-130 LDMOS S-band radar power transistor (1) (2) ( 100 = 100 μs; δ 100 mA ...
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... 2.95 3.05 3.15 f (GHz) = 300 μs; = 100 mA Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 November 2010 BLS6G2731S-130 LDMOS S-band radar power transistor 200 P L (W) 160 120 (1) (2) ( 100 μs; δ ...
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... Printed-Circuit Board (PCB): Rogers Duroid 6006; thickness = 0.64 mm; ε copper plating = 0.035 mm. See Table 9 for a list of components. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 November 2010 BLS6G2731S-130 LDMOS S-band radar power transistor ε = 6.15; thickness of r Value Remarks [ ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 November 2010 BLS6G2731S-130 LDMOS S-band radar power transistor 1.70 17.75 9.53 0.25 1.45 17.50 9.27 0.067 0.699 0.375 ...
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... NXP Semiconductors 10. Abbreviations Table 10. Acronym LDMOS RF VSWR 11. Revision history Table 11. Revision history Document ID Release date BLS6G2731S-130 v.2 20101118 • Modifications: • • • • • BLS6G2731S-130 v.1 20100726 BLS6G2731S-130 Product data sheet Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Radio Frequency Voltage Standing-Wave Ratio ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 November 2010 BLS6G2731S-130 LDMOS S-band radar power transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 November 2010 BLS6G2731S-130 LDMOS S-band radar power transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLS6G2731S-130 All rights reserved. Date of release: 18 November 2010 ...