BLS6G3135S-120 NXP Semiconductors, BLS6G3135S-120 Datasheet - Page 5

• Manufacturer Part Number: BLS6G3135S-120
• Description: 120 W LDMOS power transistor intended for radar applications in the 3
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLS6G3135-120_6G3135S-120_2
Product data sheet
Fig 4. Drain efficiency as a function of load power;
Fig 6. Power gain and drain efficiency as functions of
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(dB)
(%)
G
D
p
50
40
30
20
10
13
11
0
9
7
5
3
V
typical values
V
P
frequency; typical values
0
3
DS
DS
L
= 120 W.
= 32 V; I
= 32 V; I
40
Dq
Dq
3.2
= 100 mA; t
= 100 mA; t
80
p
p
= 300 s; = 10 %.
= 100 s; = 20 %;
3.4
120
G
D
f (GHz)
BLS6G3135-120; BLS6G3135S-120
p
(1)
(3)
001aag825
P
001aag827
L
(W)
(2)
160
3.6
Rev. 02 — 29 May 2008
50
40
30
20
10
0
(%)
D
Fig 5. Load power as a function of input power;
Fig 7. Power gain as a function of load power; typical
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(dB)
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
(W)
P
G
160
L
120
p
80
40
14
10
0
6
2
V
typical values
V
values
0
0
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-Band radar power transistor
40
5
Dq
Dq
= 100 mA; t
= 100 mA; t
10
80
p
p
= 300 s; = 10 %.
= 100 s; = 20 %.
(2)
(1)
(1)
120
15
© NXP B.V. 2008. All rights reserved.
(2)
(3)
P
001aag826
P
001aag828
L
i
(3)
(W)
(W)
160
20
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