BF1201WR NXP Semiconductors, BF1201WR Datasheet - Page 7

• Manufacturer Part Number: BF1201WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2000 Mar 29
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
R
Fig.13 Gate 1 current as a function of gate 2
V
f
Fig.15 Unwanted voltage for 1% cross-modulation
(dBμV)
unw
V unw
DS
DS
G1
(μA)
I G1
120
110
100
= 60 MHz; T
= 5 V; T
= 62 k (connected to V
= 5 V; V
60
40
20
90
80
0
0
0
voltage; typical values.
as a function of gain reduction; typical
values; see Fig.21.
j
GG
= 25 C.
= 5 V; R
amb
10
= 25 C.
G1
2
= 62 k; f = 50 MHz;
20
GG
); see Fig.21.
30
gain reduction (dB)
4
V GG = 5 V
V G2-S (V)
40
4.5 V
4 V
3.5 V
3 V
MCD943
MCD945
50
6
7
handbook, halfpage
handbook, halfpage
reduction
gain
(dB)
V
f = 50 MHz; T
Fig.14 Typical gain reduction as a function of the
V
f = 50 MHz; T
Fig.16 Drain current as a function of gain
DS
DS
(mA)
−10
−20
−30
−40
−50
I D
= 5 V; V
= 5 V; V
20
16
12
BF1201; BF1201R; BF1201WR
0
8
4
0
0
0
AGC voltage; see Fig.21.
reduction; typical values; see Fig.21.
GG
GG
amb
amb
= 5 V; R
= 5 V; R
= 25 C.
= 25 C.
10
1
G1
G1
= 62 k;
= 62 k;
20
2
30
gain reduction (dB)
Product specification
3
40
V AGC (V)
MCD944
MCD946
50
4