STPS10L60C STMicroelectronics, STPS10L60C Datasheet - Page 2

• Manufacturer Part Number: STPS10L60C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/7
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 4.
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.44 x I
Symbol
Symbol
Tj(diode 1) = P(diode1) x R
I
V
I
V
F(RMS)
P
I
dV/dt
R
I
I
F
F(AV)
T
dPtot
---------------
RRM
FSM
ARM
Symbol
RRM
dTj
T
R
(1)
stg
(1)
R
j
th (j-c)
th (c)
<
------------------------- -
Rth j a
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise reverse voltage
F(AV)
(
1
Absolute ratings (limiting values, per diode)
–
Thermal resistance
Static electrical characteristics (per diode)
)
Junction to case
Coupling
thermal runaway condition for a diode on its own heatsink
Parameter
+ 0.0091x I
F
th(j-c)
2
(RMS)
Doc ID 6426 Rev 5
(Per diode) + P(diode 2) x R
T
T
T
T
T
T
Parameter
j
j
j
j
j
j
= 125 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 25 °C
Parameter
Tests Conditions
tp = 10 ms Sinusoidal
T
δ = 0.5
tp = 2 µs square F=1 kHz
tp = 1 µs T
Per diode
Total
(1)
C
V
I
I
= 130 °C
R
I
I
F
F
F
F
= V
= 10 A
= 10 A
= 5 A
= 5 A
RRM
j
= 25 °C
Per diode
Per device
th(c)
Min.
Value
Typ.
0.43
0.55
4.5
3.5
2.5
45
-65 to +
10000
Value
Max.
4000
0.55
0.52
0.67
0.64
180
220
175
150
STPS10L60C
60
60
30
10
5
1
° C/W
° C/W
Unit
Unit
mA
µA
V/µs
Unit
V
W
°C
°C
V
A
A
A
A