STPS10L60C STMicroelectronics, STPS10L60C Datasheet - Page 3

• Manufacturer Part Number: STPS10L60C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

STPS10L60C
Figure 1.
Figure 3.
Figure 5.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
0
1E-3
0.001
0.0
0.01
0.1
I (A)
P
M
1
0.01
F(AV)
P
0.5
I
P
M
ARM
ARM
(W)
1.0
(1 µs)
δ
(t p )
=0.5
t
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0.1
δ = 0.05
1.5
2.0
1E-2
δ = 0.1
2.5
1
I
F(AV)
3.0
t (µs)
p
δ = 0.2
t(s)
(A)
3.5
10
4.0
1E-1
δ = 0.5
4.5
5.0
100
δ
=tp/T
δ = 1
5.5
Doc ID 6426 Rev 5
T
T =125°C
T =25°C
T =75°C
C
6.0
C
C
1000
tp
1E+0
6.5
Figure 2.
Figure 4.
Figure 6.
1.0
0.8
0.6
0.4
0.2
0.0
6
5
4
3
2
1
0
1E-3
0
I
1.2
0.8
0.6
0.4
0.2
F(AV)
Z
1
0
th(j-c)
δ
δ = 0.5
Single pulse
25
δ = 0.2
δ = 0.1
=tp/T
P
(A)
ARM
P
ARM
/R
25
T
(25 °C)
th(j-c)
(T j )
tp
Average forward current versus
ambient temperature (
(per diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
transient impedance junction to
case versus pulse duration
1E-2
50
50
75
T
amb
R
t (s)
th(j-a)
T (°C)
p
1E-1
75
j
=R
(°C)
th(j-c)
100
R
th(j-a)
100
=15°C/W
Characteristics
1E+0
δ = 0.5)
δ
125
=tp/T
125
T
tp
150
1E+1
150
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