STPS20150C STMicroelectronics, STPS20150C Datasheet - Page 2

• Manufacturer Part Number: STPS20150C
• Description: High Voltage Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/10
Characteristics
Table 2.
1.
Table 3.
When the diodes 1 and 2 are used simultaneously:
ΔT
Table 4.
1. t
2. t
To evaluate the conduction losses use the following equation:
P = 0.64 x I
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
P
R
V
I
I
j
F(AV)
T
R
FSM
(diode 1) = P(diode 1) x
th(j-c)
RRM
ARM
F
p
p
T
th(c)
dPtot
stg
dTj
(1)
= 5 ms, δ < 2%
= 380 µs, δ < 2%
j
(2)
<
Repetitive peak reverse voltage
Forward rms voltage
Average forward
current δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
Rth(j-a)
F(AV)
1
Absolute ratings (limiting values)
Thermal resistance
Static electrical characteristics (per diode)
Parameter
+ 0.011 I
condition to avoid thermal runaway for a diode on its own heatsink
F
2
(RMS)
R
th(j-l)
Doc ID 7756 Rev 9
TO-220AB, D
TO-220FPAB
TO-220AB, D
TO-220FPAB
TO-220AB, D
TO-220FPAB
TO-220AB
I
TO-220FPAB
2
(Per diode) + P(diode 2) x
PAK, D
T
T
T
T
T
T
Parameter
Parameter
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Tests conditions
2
PAK
2
2
2
PAK, I
PAK, I
PAK, I
V
I
I
T
T
t
t
F
F
p
p
c
c
(1)
R
= 10 A
= 20 A
= 10 ms sinusoidal
= 1 µs T
= 155 °C Per diode
= 135 °C Per device
= V
2
2
2
PAK
PAK
PAK
RRM
j
= 25 °C
Per diode
Total
Min.
R
th(c)
Typ.
0.69
0.79
- 65 to + 150
Value
Value
6700
150
180
175
2.2
4.5
1.3
3.5
0.3
2.5
30
10
20
Max.
0.92
0.75
0.86
5.0
5.0
STPS20150C
1
°C/W
Unit
Unit
Unit
mA
µA
°C
W
°C
V
V
A
A
A