STPS20L60C

Manufacturer Part NumberSTPS20L60C
DescriptionLow Drop Power Schottky Rectifier
ManufacturerSTMicroelectronics
STPS20L60C datasheet
 


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MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
(max)
F
FEATURES AND BENEFITS
LOW FORWARD VOLTAGE DROP
NEGLIGIBLE SWITCHING LOSSES
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
2
Packaged in TO-220AB, I
PAK and D
device is intended for
use in high frequency
inverters.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
V
Repetitive peak reverse voltage
RRM
I
RMS forward current
F(RMS)
I
Average forward current
F(AV)
I
Surge non repetitive forward current
FSM
I
Repetitive peak reverse current
RRM
P
Repetitive peak avalanche power
ARM
T
Storage temperature range
stg
Tj
Maximum operating junction temperature *
dV/dt
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
* :
dTj
Rth j
(
a
)
July 2003 - Ed: 3C
STPS20L60CT/CG/CR
POWER SCHOTTKY RECTIFIER
2 x 10 A
60 V
150 °C
0.56 V
TO-220AB
STPS20L60CT
2
PAK, this
Parameter
Tc = 140°C
= 0.5
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 1µs Tj = 25°C
A1
K
A2
K
A2
K
A1
A1
2
D
PAK
STPS20L60CG
A2
K
A1
2
I
PAK
STPS20L60CR
Value
60
30
10
Per diode
20
Per device
220
1
5800
- 65 to + 175
150
10000
A2
Unit
V
A
A
A
A
W
C
C
V/µs
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STPS20L60C Summary of contents

  • Page 1

    ... Parameter Tc = 140° Sinusoidal µs square F = 1kHz tp = 1µ 25° PAK STPS20L60CG PAK STPS20L60CR Value Per diode 20 Per device 220 1 5800 - 175 150 10000 A2 Unit V/µs ...

  • Page 2

    ... STPS20L60CT/CG/CR THERMAL RESISTANCE Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

  • Page 3

    ... Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 = 0.5 Tc=25°C 0.4 = 0.2 Tc=75°C = 0.1 0.2 Tc=100°C Single pulse 0.0 1E-1 1E+0 1E-4 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 2.0 1.0 0.5 0.2 0.1 1 STPS20L60CT/CG/ (25°C) T (° 100 tp(s) 1E-3 1E-2 1E-1 VR(V) 10 125 150 T tp =tp/T 1E+0 F=1MHz Tj=25°C 100 3/6 ...

  • Page 4

    ... STPS20L60CT Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=150°C (typical values) Tj=25°C 10.0 Tj=125°C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 PACKAGE MECHANICAL DATA 2 I PAK 4/6 REF DIMENSIONS ...

  • Page 5

    ... G * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 8.90 REF 5.08 1.30 3.70 STPS20L60CT/CG/CR DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8 ...

  • Page 6

    ... STPS20L60CT STPS20L60CT STPS20L60CT STPS20L60CT STPS20L60CG STPS20L60CG STPS20L60CG-TR STPS20L60CG STPS20L60CR STPS20L60CR EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...