STPS20L60C STMicroelectronics, STPS20L60C Datasheet

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STPS20L60C

Manufacturer Part Number
STPS20L60C
Description
Low Drop Power Schottky Rectifier
Manufacturer
STMicroelectronics
Datasheet
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, I
device is intended for
inverters.
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
* :
July 2003 - Ed: 3C
Symbol
I
LOW FORWARD VOLTAGE DROP
NEGLIGIBLE SWITCHING LOSSES
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
F(AV)
T
RRM
dPtot
FSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
use in high frequency
2
PAK and D
2 x 10 A
150 °C
0.56 V
60 V
Parameter
2
PAK, this
POWER SCHOTTKY RECTIFIER
Tc = 140°C
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 1µs Tj = 25°C
= 0.5
STPS20L60CT/CG/CR
STPS20L60CT
TO-220AB
Per diode
Per device
A1
A1
A2
STPS20L60CR
K
A2
I
2
PAK
- 65 to + 175
10000
Value
5800
STPS20L60CG
K
220
150
A1
60
30
10
20
1
K
K
D
A2
2
PAK
A1
V/µs
Unit
A2
W
V
A
A
A
A
C
C
1/6

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STPS20L60C Summary of contents

Page 1

... Parameter Tc = 140° Sinusoidal µs square F = 1kHz tp = 1µ 25° PAK STPS20L60CG PAK STPS20L60CR Value Per diode 20 Per device 220 1 5800 - 175 150 10000 A2 Unit V/µs ...

Page 2

... STPS20L60CT/CG/CR THERMAL RESISTANCE Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 µs, < evaluate the conduction losses use the following equation : ...

Page 3

... Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 = 0.5 Tc=25°C 0.4 = 0.2 Tc=75°C = 0.1 0.2 Tc=100°C Single pulse 0.0 1E-1 1E+0 1E-4 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 2.0 1.0 0.5 0.2 0.1 1 STPS20L60CT/CG/ (25°C) T (° 100 tp(s) 1E-3 1E-2 1E-1 VR(V) 10 125 150 T tp =tp/T 1E+0 F=1MHz Tj=25°C 100 3/6 ...

Page 4

... STPS20L60CT Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=150°C (typical values) Tj=25°C 10.0 Tj=125°C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 PACKAGE MECHANICAL DATA 2 I PAK 4/6 REF DIMENSIONS ...

Page 5

... G * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 8.90 REF 5.08 1.30 3.70 STPS20L60CT/CG/CR DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.14 1.70 0.045 0.067 0.45 0.60 0.017 0.024 1.23 1.36 0.048 0.054 8 ...

Page 6

... STPS20L60CT STPS20L60CT STPS20L60CT STPS20L60CT STPS20L60CG STPS20L60CG STPS20L60CG-TR STPS20L60CG STPS20L60CR STPS20L60CR EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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