STPS20M60C STMicroelectronics, STPS20M60C Datasheet - Page 3

• Manufacturer Part Number: STPS20M60C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

STPS20M60C
Table 4.
1. Pulse test: t
2. Pulse test: t
Figure 2.
Figure 4.
0.001
Symbol
0.01
8
7
6
5
4
3
2
1
0
0.1
V
0
I
P
1
0.01
R
F
F(AV)
(1)
(2)
P
P
ARM
1
(W)
ARM
(1µs)
(t p )
2
Reverse leakage current
Forward voltage drop
p
p
Static electrical characteristics (per diode)
To evaluate the conduction losses use the following equation:
P = 0.375 x I
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
3
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
δ = 0.05
4
Parameter
5
1
δ = 0.1
6
δ = t / T
F(AV)
p
7
δ = 0.2
+ 0.0135 x I
T
8
10
t
p
9
T
T
T
T
T
T
j
j
j
j
j
j
δ = 0.5
10
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
100
11
F
Doc ID 022057 Rev 1
Test conditions
2
I
(RMS)
F(AV)
12
δ = 1
t (µs)
p
(A)
1000
13
V
I
I
F
F
R
Figure 3.
Figure 5.
1.2
0.8
0.6
0.4
0.2
= 5 A
= 10 A
= V
12
10
1
0
25
8
6
4
2
0
P
0
I
ARM
P
F(AV)
RRM
ARM
(25 °C)
(A)
(T )
j
25
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Min.
-
-
-
-
-
-
50
75
R th(j-a) = R th(j-c)
T
0.465
0.370
0.525
0.450
Typ.
amb
75
15
10
(°C)
100
100
0.500
0.410
0.570
0.510
Max.
Characteristics
65
40
125
125
Unit
mA
µA
T (°C)
V
j
150
3/10
150