STTH3002C STMicroelectronics, STTH3002C Datasheet - Page 4

• Manufacturer Part Number: STTH3002C
• Description: High Efficiency Ultrafast Diode
• Manufacturer: STMicroelectronics

Specifications of STTH3002C

• Insulated Voltage: 2500 Vrms

Characteristics
4/11
Figure 3.
Figure 5.
Figure 7.
100
1000
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
100
0
10
0
10
0.0
t (ns)
I
rr
0
FM
C(pF)
I =15A
V =160V
F
R
(A)
0.2
0.4
Forward voltage drop versus
forward current (maximum values,
per diode)
Junction capacitance versus
reverse applied voltage (typical
values, per diode)
Reverse recovery time versus
dI
F
50
/dt (typical values, per diode)
0.6
0.8
dI /dt(A/µs)
T =125°C
j
F
T =150°C
j
V (V)
100
1.0
R
100
V
FM
1.2
(V)
1.4
T =25°C
T =25°C
j
j
150
1.6
V
OSC
F=1MHz
T =25°C
=30mV
j
1.8
RMS
1000
200
2.0
Figure 4.
Figure 6.
Figure 8.
14
13
12
11
10
250
225
200
175
150
125
100
1.0
0.1
9
8
7
6
5
4
3
2
1
0
75
50
25
1.E-03
0
10
I
10
RM
Z
Q (nC)
th(j-c)
I =15A
V =160V
I =15A
V =160V
rr
F
F
R
R
(A)
Single pulse
/R
th(j-c)
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
diode)
F
/dt (typical values, per diode)
1.E-02
dI /dt(A/µs)
F
dI /dt(A/µs)
F
/dt (typical values, per
T =125°C
F
j
t (s)
p
100
100
T =125°C
j
1.E-01
T =25°C
j
STTH3002C
T =25°C
j
1.E+00
1000
1000