STGD18N40LZ STMicroelectronics, STGD18N40LZ Datasheet - Page 3

• Manufacturer Part Number: STGD18N40LZ
• Description: EAS 180 mJ - 390 V - internally clamped IGBT
• Manufacturer: STMicroelectronics

STGB18N40LZ, STGD18N40LZ, STGP18N40LZ
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula
2. Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Symbol
R
R
I
V
V
P
thj-case
I
ESD
CP
thj-amb
V
E
E
T
C
CES
ECS
TOT
T
GE
AS
AS
stg
(1)
j
(2)
Thermal resistance junction-case
Thermal resistance junction-ambient
Collector-emitter voltage (v
Emitter collector voltage (V
Collector current (continuous) at T
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
Single pulse energy T
Single pulse energy T
Human body model, R= 1.5 kΩ , C = 100 pF
Machine model, R = 0, C = 100 pF
Charged device model
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
I
C
(
T
Parameter
C
)
C
=
Parameter
Doc ID 14322 Rev 5
C
C
= 25 °C
= 25 °C, L = 3 mH, V
=150 °C, L = 3 mH, V
--------------------------------------------------------------------------------------------------------- -
R
thj c
GE
GE
–
= 0)
×
= 0)
V
CE sat
C
= 100 °C
(
T
j max
(
) max
(
)
CC
CC
–
)
(
T
T
= 50 V
= 50 V
C
DPAK
j max
IPAK
(
100
1.2
)
,
I
C
DPAK
IPAK
125
(
25
T
Value
C
)
V
V
)
– 55 to 175
I²PAK, TO-220
CES(clamped)
GE(clamped)
Value
I²PAK, TO-220
300
180
800
D²PAK
20
40
8
2
62.5
Electrical ratings
1
D²PAK
150
30
°C/W
°C/W
Unit
Unit
mJ
mJ
kV
kV
°C
W
V
A
V
V
V
A
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